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IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

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IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

Model Number : IRF7240TRPBF

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : MOSFET P-CH 40V 10.5A 8SO

Drain- Source Voltage : -40 V

Continuous Drain Current : -10.5 A

Pulsed Drain Current : -43 A

Power Dissipation : 2.5 W

Linear Derating Factor : 20 mW/°C

Gate-to-Source Voltage : ± 20 V

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Stock Offer (Hot Sell)

Part no. Quantity Brand D/C Package
NDT456P 5000 FAIRCHILD 16+ SOP8
OB2268CCPA 5000 OB 16+ SOP8
P2003EVG 5000 NIKOS 13+ SOP8
P6SMB27CA 5000 VISHAY 15+ SMB
P89LPC932A1FDH 5000 16+ TSSOP
PC400J00000F SOP-5 5000 SHARP 16+ SOP-5
PIC16C711-04/P 5000 MICROCHIP 14+ DIP-18
PIC16F716-I/P 5000 MICROCHIP 14+ DIP-18
PIC16F84A-04I/SO 5000 MICROCHIP 14+ SOP18
PIC16F886-I/SP 5000 MICROCHIP 16+ DIP
PIC18F4431-I/PT 5000 MICROCHIP 16+ TQFPQFP
RFD15P05SM 5000 INTERSIL 13+ TO-252
RT8010GQW 5000 RICHTEK 15+ WDFN
SFH6156-4 5000 VISHAY 16+ SOP4
SI4880DY-T1-E3 5000 VISHAT 16+ SOP-8
SLF6028T-100M1R3-PF 5000 TDK 14+ SMD
SM15T15A 5000 ST 14+ DO-214AB
SM6S24A 5000 VISHAY 14+ DO-218
SMAJ15A 5000 VISHAY 16+ SOD-214A
SMBJ6.0A 5000 VISHAY 16+ SMB
SMCJ54A-E3 5000 VISHAY 13+ DO-214A
SN74AHC123ADR 5000 TI 15+ SOP-16
SN74HC132N 5000 TI 16+ SOP
SN74HC148N TI 0401 5000 TI 16+ SOP-16
ST232ABDR 5000 ST 14+ SMD
ST232CWR 5000 ST 14+ SOP16
STM8S103F2P6 5000 ST 14+ SSOP
STP75NF75 5000 ST 16+ TO-220
STTH1R06U 5000 ST 16+ SMB
STU309D 5000 SAMHOP 13+ SOT-252

IRF7240PbF

HEXFET Power MOSFET

  • Ultra Low On-Resistance 
  • P-Channel MOSFET 
  • Surface Mount 
  • Available in Tape & Reel 
  • Lead-Free

VDSS RDS(on) max ID
-40V 0.015@VGS = -10V -10.5A
0.025@VGS = -4.5V -8.4A

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10.5 A
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -8.6 A
IDM Pulsed Drain Current -43 A
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6 W
Linear Derating Factor 20 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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