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IRFP044N Power Mosfet Transistor complementary power mosfet

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IRFP044N Power Mosfet Transistor complementary power mosfet

Model Number : IRFP044N

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : MOSFET N-CH 55V 53A TO247AC

Pulsed Drain Current : 180 A

Power Dissipation : 120 W

Linear Derating Factor : 0.77 W/°C

Gate-to-Source Voltage : ± 20 V

Single Pulse Avalanche Energy : 230 mJ

Avalanche Current : 28 A

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IRFP044N HEXFET® Power MOSFET

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A
IDM Pulsed Drain Current 180 A
PD @TC = 25°C Power Dissipation 120 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚… 230 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 12 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

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